Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO(x) bipolar resistive switching

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resist...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Taeyoon, Baek, Gwangho, Yang, Seungmo, Yang, Jung Yup, Yoon, Kap Soo, Kim, Soo Gil, Lee, Jae Yeon, Im, Hyun Sik, Hong, Jin Pyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5986858/
https://www.ncbi.nlm.nih.gov/pubmed/29867108
http://dx.doi.org/10.1038/s41598-018-26997-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5986858/
https://www.ncbi.nlm.nih.gov/pubmed/29867108
http://dx.doi.org/10.1038/s41598-018-26997-y

Ejemplares similares