Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO(x) bipolar resistive switching

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta(2)O(5−x) oxide-based bipolar resistive frames for various TaN(x) bottoms. Control of the nitrogen content of the TaN(x) electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta(2)O(5−x) and TaN(x) layers and characterized the TaN(x) electrode-dependent switching behavior in terms of the electrode’s oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.