Hexagonal MoTe(2) with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors

Environmental and thermal stability of two-dimensional (2D) transition metal dichalcogenides (TMDs) remains a fundamental challenge towards enabling robust electronic devices. Few-layer 2H-MoTe(2) with an amorphous boron nitride (a-BN) covering layer was synthesized as a channel for back-gated field...

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Detalles Bibliográficos
Autores principales: Sirota, Benjamin, Glavin, Nicholas, Krylyuk, Sergiy, Davydov, Albert V., Voevodin, Andrey A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5989207/
https://www.ncbi.nlm.nih.gov/pubmed/29875367
http://dx.doi.org/10.1038/s41598-018-26751-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5989207/
https://www.ncbi.nlm.nih.gov/pubmed/29875367
http://dx.doi.org/10.1038/s41598-018-26751-4

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