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Hexagonal MoTe(2) with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
Environmental and thermal stability of two-dimensional (2D) transition metal dichalcogenides (TMDs) remains a fundamental challenge towards enabling robust electronic devices. Few-layer 2H-MoTe(2) with an amorphous boron nitride (a-BN) covering layer was synthesized as a channel for back-gated field...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5989207/ https://www.ncbi.nlm.nih.gov/pubmed/29875367 http://dx.doi.org/10.1038/s41598-018-26751-4 |