Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around...

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Detalles Bibliográficos
Autores principales: Al-Saigh, Reem, Baira, Mourad, Salem, Bassem, Ilahi, Bouraoui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5991110/
https://www.ncbi.nlm.nih.gov/pubmed/29882031
http://dx.doi.org/10.1186/s11671-018-2587-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5991110/
https://www.ncbi.nlm.nih.gov/pubmed/29882031
http://dx.doi.org/10.1186/s11671-018-2587-1

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