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Tunability of p- and n-channel TiO(x) thin film transistors

To acquire device-quality TiO(x) films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiO(x) even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron s...

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Detalles Bibliográficos
Autores principales: Peng, Wu-Chang, Chen, Yao-Ching, He, Ju-Liang, Ou, Sin-Liang, Horng, Ray-Hua, Wuu, Dong-Sing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6006147/
https://www.ncbi.nlm.nih.gov/pubmed/29915301
http://dx.doi.org/10.1038/s41598-018-27598-5