Directed Self-Assembly of Ge Quantum Dots Using Focused Si(2+) Ion Beam Patterning

We show that templating a Si surface with a focused beam of Si(2+) or Si(+) ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, simila...

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Detalles Bibliográficos
Autores principales: Chee, See Wee, Kammler, Martin, Graham, Jeremy, Gignac, Lynne, Reuter, Mark C., Hull, Robert, Ross, Frances M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6008470/
https://www.ncbi.nlm.nih.gov/pubmed/29921894
http://dx.doi.org/10.1038/s41598-018-27512-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6008470/
https://www.ncbi.nlm.nih.gov/pubmed/29921894
http://dx.doi.org/10.1038/s41598-018-27512-z

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