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Predicting the strain-mediated topological phase transition in 3D cubic ThTaN(3)
The cubic ThTaN(3) compound has long been known as a semiconductor with a band gap of approximately 1 eV, but its electronic properties remain largely unexplored. By using density functional theory, we find that the band gap of ThTaN(3) is very sensitive to the hydrostatic pressure/strain. A Dirac c...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Beilstein-Institut
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009352/ https://www.ncbi.nlm.nih.gov/pubmed/29977674 http://dx.doi.org/10.3762/bjnano.9.132 |