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Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices
In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional s...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009372/ https://www.ncbi.nlm.nih.gov/pubmed/29977714 http://dx.doi.org/10.3762/bjnano.9.172 |
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author | Axt, Amelie Hermes, Ilka M Bergmann, Victor W Tausendpfund, Niklas Weber, Stefan A L |
author_facet | Axt, Amelie Hermes, Ilka M Bergmann, Victor W Tausendpfund, Niklas Weber, Stefan A L |
author_sort | Axt, Amelie |
collection | PubMed |
description | In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference structure consisting of an interdigitated electrode array. This structure mimics the sample geometry in device measurements, e.g., on thin film transistors or on solar cell cross sections. In particular, we investigate how quantitative different KPFM methods can measure a predefined externally applied voltage difference between the electrodes. We found that generally, FM-KPFM methods provide more quantitative results that are less affected by the presence of stray electric fields compared to AM-KPFM methods. |
format | Online Article Text |
id | pubmed-6009372 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-60093722018-07-05 Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices Axt, Amelie Hermes, Ilka M Bergmann, Victor W Tausendpfund, Niklas Weber, Stefan A L Beilstein J Nanotechnol Full Research Paper In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference structure consisting of an interdigitated electrode array. This structure mimics the sample geometry in device measurements, e.g., on thin film transistors or on solar cell cross sections. In particular, we investigate how quantitative different KPFM methods can measure a predefined externally applied voltage difference between the electrodes. We found that generally, FM-KPFM methods provide more quantitative results that are less affected by the presence of stray electric fields compared to AM-KPFM methods. Beilstein-Institut 2018-06-15 /pmc/articles/PMC6009372/ /pubmed/29977714 http://dx.doi.org/10.3762/bjnano.9.172 Text en Copyright © 2018, Axt et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Axt, Amelie Hermes, Ilka M Bergmann, Victor W Tausendpfund, Niklas Weber, Stefan A L Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title | Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title_full | Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title_fullStr | Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title_full_unstemmed | Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title_short | Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices |
title_sort | know your full potential: quantitative kelvin probe force microscopy on nanoscale electrical devices |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009372/ https://www.ncbi.nlm.nih.gov/pubmed/29977714 http://dx.doi.org/10.3762/bjnano.9.172 |
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