Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH(4) and N(2)O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rende...

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Detalles Bibliográficos
Autores principales: Hiller, Daniel, López-Vidrier, Julian, Nomoto, Keita, Wahl, Michael, Bock, Wolfgang, Chlouba, Tomáš, Trojánek, František, Gutsch, Sebastian, Zacharias, Margit, König, Dirk, Malý, Petr, Kopnarski, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009393/
https://www.ncbi.nlm.nih.gov/pubmed/29977683
http://dx.doi.org/10.3762/bjnano.9.141

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009393/
https://www.ncbi.nlm.nih.gov/pubmed/29977683
http://dx.doi.org/10.3762/bjnano.9.141

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