Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its wort...

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Detalles Bibliográficos
Autores principales: von den Driesch, Nils, Stange, Daniela, Rainko, Denis, Povstugar, Ivan, Zaumseil, Peter, Capellini, Giovanni, Schröder, Thomas, Denneulin, Thibaud, Ikonic, Zoran, Hartmann, Jean‐Michel, Sigg, Hans, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010800/
https://www.ncbi.nlm.nih.gov/pubmed/29938172
http://dx.doi.org/10.1002/advs.201700955

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010800/
https://www.ncbi.nlm.nih.gov/pubmed/29938172
http://dx.doi.org/10.1002/advs.201700955

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