Resistive switching in optoelectronic III-V materials based on deep traps

Resistive switching random access memories (ReRAM) are promising candidates for energy efficient, fast, and non-volatile universal memories that unite the advantages of RAM and hard drives. Unfortunately, the current ReRAM materials are incompatible with optical interconnects and wires. Optical sign...

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Detalles Bibliográficos
Autores principales: Schnedler, M., Portz, V., Semmler, U., Moors, M., Waser, R., Dunin-Borkowski, R. E., Ebert, Ph.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013487/
https://www.ncbi.nlm.nih.gov/pubmed/29930354
http://dx.doi.org/10.1038/s41598-018-27835-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013487/
https://www.ncbi.nlm.nih.gov/pubmed/29930354
http://dx.doi.org/10.1038/s41598-018-27835-x

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