Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors

With sp(2)-nitrogen atoms embedded in an isatin unit, a donor–acceptor (D–A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to –4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(–...

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Autores principales: Dai, Ya-Zhong, Ai, Na, Lu, Yang, Zheng, Yu-Qing, Dou, Jin-Hu, Shi, Ke, Lei, Ting, Wang, Jie-Yu, Pei, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2016
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6022156/
https://www.ncbi.nlm.nih.gov/pubmed/30034713
http://dx.doi.org/10.1039/c6sc01380e
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author Dai, Ya-Zhong
Ai, Na
Lu, Yang
Zheng, Yu-Qing
Dou, Jin-Hu
Shi, Ke
Lei, Ting
Wang, Jie-Yu
Pei, Jian
author_facet Dai, Ya-Zhong
Ai, Na
Lu, Yang
Zheng, Yu-Qing
Dou, Jin-Hu
Shi, Ke
Lei, Ting
Wang, Jie-Yu
Pei, Jian
author_sort Dai, Ya-Zhong
collection PubMed
description With sp(2)-nitrogen atoms embedded in an isatin unit, a donor–acceptor (D–A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to –4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(–1) s(–1) tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp(2)-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.
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spelling pubmed-60221562018-07-20 Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors Dai, Ya-Zhong Ai, Na Lu, Yang Zheng, Yu-Qing Dou, Jin-Hu Shi, Ke Lei, Ting Wang, Jie-Yu Pei, Jian Chem Sci Chemistry With sp(2)-nitrogen atoms embedded in an isatin unit, a donor–acceptor (D–A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to –4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(–1) s(–1) tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp(2)-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance. Royal Society of Chemistry 2016-09-01 2016-06-13 /pmc/articles/PMC6022156/ /pubmed/30034713 http://dx.doi.org/10.1039/c6sc01380e Text en This journal is © The Royal Society of Chemistry 2016 http://creativecommons.org/licenses/by/3.0/ This article is freely available. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence (CC BY 3.0)
spellingShingle Chemistry
Dai, Ya-Zhong
Ai, Na
Lu, Yang
Zheng, Yu-Qing
Dou, Jin-Hu
Shi, Ke
Lei, Ting
Wang, Jie-Yu
Pei, Jian
Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title_full Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title_fullStr Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title_full_unstemmed Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title_short Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
title_sort embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6022156/
https://www.ncbi.nlm.nih.gov/pubmed/30034713
http://dx.doi.org/10.1039/c6sc01380e
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