Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely relate...

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Detalles Bibliográficos
Autores principales: Song, Yue, Zhang, Ligong, Zeng, Yugang, Qin, Li, Zhou, Yinli, Ning, Yongqiang, Wang, Lijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6024925/
https://www.ncbi.nlm.nih.gov/pubmed/29925827
http://dx.doi.org/10.3390/ma11061049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6024925/
https://www.ncbi.nlm.nih.gov/pubmed/29925827
http://dx.doi.org/10.3390/ma11061049

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