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Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence
An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely relate...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6024925/ https://www.ncbi.nlm.nih.gov/pubmed/29925827 http://dx.doi.org/10.3390/ma11061049 |