The Effect of Buffer Types on the In(0.82)Ga(0.18)As Epitaxial Layer Grown on an InP (100) Substrate

In(0.82)Ga(0.18)As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer lay...

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Detalles Bibliográficos
Autores principales: Zhang, Min, Guo, Zuoxing, Zhao, Liang, Yang, Shen, Zhao, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6025214/
https://www.ncbi.nlm.nih.gov/pubmed/29890689
http://dx.doi.org/10.3390/ma11060975

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6025214/
https://www.ncbi.nlm.nih.gov/pubmed/29890689
http://dx.doi.org/10.3390/ma11060975

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