High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement whe...

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Detalles Bibliográficos
Autores principales: Jegenyes, Nikoletta, Morassi, Martina, Chrétien, Pascal, Travers, Laurent, Lu, Lu, Julien, Francois H., Tchernycheva, Maria, Houzé, Frédéric, Gogneau, Noelle
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6027191/
https://www.ncbi.nlm.nih.gov/pubmed/29799440
http://dx.doi.org/10.3390/nano8060367

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6027191/
https://www.ncbi.nlm.nih.gov/pubmed/29799440
http://dx.doi.org/10.3390/nano8060367

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