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High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement whe...

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Detalles Bibliográficos
Autores principales:	Jegenyes, Nikoletta, Morassi, Martina, Chrétien, Pascal, Travers, Laurent, Lu, Lu, Julien, Francois H., Tchernycheva, Maria, Houzé, Frédéric, Gogneau, Noelle
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6027191/ https://www.ncbi.nlm.nih.gov/pubmed/29799440 http://dx.doi.org/10.3390/nano8060367

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