Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor a...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Vu, Thi Kim Oanh, Lee, Kyoung Su, Kim, Eun Kyu, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6027380/
https://www.ncbi.nlm.nih.gov/pubmed/29865230
http://dx.doi.org/10.3390/nano8060397

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6027380/
https://www.ncbi.nlm.nih.gov/pubmed/29865230
http://dx.doi.org/10.3390/nano8060397

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