Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique

Silicon waveguide photodiodes (SiWG PD) based on the bulk defect-mediated absorption (BDA) of sub-bandgap photons are suitable to realize in-line optical power monitors for silicon photonic integrated circuits. Deep-level states to enable the BDA can be induced by exploiting the ion implantation ste...

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Detalles Bibliográficos
Autores principales: Zhang, Qiang, Yu, Hui, Qi, Tian, Fu, Zhilei, Jiang, Xiaoqing, Yang, Jianyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6028655/
https://www.ncbi.nlm.nih.gov/pubmed/29967412
http://dx.doi.org/10.1038/s41598-018-28139-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6028655/
https://www.ncbi.nlm.nih.gov/pubmed/29967412
http://dx.doi.org/10.1038/s41598-018-28139-w

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