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Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique
Silicon waveguide photodiodes (SiWG PD) based on the bulk defect-mediated absorption (BDA) of sub-bandgap photons are suitable to realize in-line optical power monitors for silicon photonic integrated circuits. Deep-level states to enable the BDA can be induced by exploiting the ion implantation ste...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6028655/ https://www.ncbi.nlm.nih.gov/pubmed/29967412 http://dx.doi.org/10.1038/s41598-018-28139-w |