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Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

Non-polar (11–20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively reduced line...

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Detalles Bibliográficos
Autores principales: Jiu, L., Gong, Y., Wang, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6028661/
https://www.ncbi.nlm.nih.gov/pubmed/29967473
http://dx.doi.org/10.1038/s41598-018-28328-7