Cargando…
Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
Non-polar (11–20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively reduced line...
Autores principales: | Jiu, L., Gong, Y., Wang, T. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6028661/ https://www.ncbi.nlm.nih.gov/pubmed/29967473 http://dx.doi.org/10.1038/s41598-018-28328-7 |
Ejemplares similares
-
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022) -
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022) -
Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates
por: Poyiatzis, N., et al.
Publicado: (2019) -
Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire
por: Jiang, Teng, et al.
Publicado: (2016) -
Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
por: Jang, Dongsoo, et al.
Publicado: (2018)