Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is...

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Detalles Bibliográficos
Autores principales: Benyahia, D., Kubiszyn, Ł., Michalczewski, K., Boguski, J., Kębłowski, A., Martyniuk, P., Piotrowski, J., Rogalski, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6033846/
https://www.ncbi.nlm.nih.gov/pubmed/29978267
http://dx.doi.org/10.1186/s11671-018-2612-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6033846/
https://www.ncbi.nlm.nih.gov/pubmed/29978267
http://dx.doi.org/10.1186/s11671-018-2612-4

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