Cargando…

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is...

Descripción completa

Detalles Bibliográficos
Autores principales:	Benyahia, D., Kubiszyn, Ł., Michalczewski, K., Boguski, J., Kębłowski, A., Martyniuk, P., Piotrowski, J., Rogalski, A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2018
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6033846/ https://www.ncbi.nlm.nih.gov/pubmed/29978267 http://dx.doi.org/10.1186/s11671-018-2612-4

Ejemplares similares

InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors
por: Manyk, Tetiana, et al.
Publicado: (2019)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
por: Wu, Shujie, et al.
Publicado: (2013)

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes
por: Czuba, Krzysztof, et al.
Publicado: (2021)

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
por: Marchewka, Michał, et al.
Publicado: (2023)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
por: Kim, Honggyu, et al.
Publicado: (2018)

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
por: Chen, Jianxin, et al.
Publicado: (2011)

Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
por: Li, Yuan, et al.
Publicado: (2014)

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
por: Alshahrani, Dhafer, et al.
Publicado: (2023)

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021)

Evidence for a topological excitonic insulator in InAs/GaSb bilayers
por: Du, Lingjie, et al.
Publicado: (2017)

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
por: Li, Li-Gong, et al.
Publicado: (2012)

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
por: Sankowska, Iwona, et al.
Publicado: (2021)

Remote p-type Doping in GaSb/InAs Core-shell Nanowires
por: Ning, Feng, et al.
Publicado: (2015)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

High-Performance Anodic Vulcanization-Pretreated Gated P(+)–π–M–N(+) InAs/GaSb Superlattice Long-Wavelength Infrared Detector
por: Sun, Ju, et al.
Publicado: (2021)

Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010)

Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
por: Persson, Olof, et al.
Publicado: (2015)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
por: Manzo, Sebastian, et al.
Publicado: (2022)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
por: Jallipalli, A, et al.
Publicado: (2009)

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
por: Lin, Hsiang-Ting, et al.
Publicado: (2020)

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
por: Hoang, Anh Minh, et al.
Publicado: (2016)

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
por: Chusovitin, Evgeniy, et al.
Publicado: (2018)

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
por: Vasen, T., et al.
Publicado: (2019)

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
por: Ji, Xianghai, et al.
Publicado: (2017)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System
por: Müller, Raphael, et al.
Publicado: (2020)

Properties of Doped GaSb Whiskers at Low Temperatures
por: Khytruk, Igor, et al.
Publicado: (2017)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019)

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016)

Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet
por: Baik, Min, et al.
Publicado: (2021)

Enhanced thermoelectric properties of Zn-doped GaSb nanocomposites
por: Fu, Qiang, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_5rbnge5rp1v1vtri5hdr7s5tfc