A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si(1−)(x)Ge(x) and Si layers

In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the re...

Descripción completa

Detalles Bibliográficos
Autores principales: Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6036972/
https://www.ncbi.nlm.nih.gov/pubmed/30013886
http://dx.doi.org/10.3762/bjnano.9.184

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6036972/
https://www.ncbi.nlm.nih.gov/pubmed/30013886
http://dx.doi.org/10.3762/bjnano.9.184

Ejemplares similares