Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed monolithically on a GaN wafer. The output wavelength of the devices is 441–455 nm. The threshold current is 40 mA (J(th) = 141 kA/c...

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Detalles Bibliográficos
Autores principales: Hamaguchi, Tatsushi, Tanaka, Masayuki, Mitomo, Jugo, Nakajima, Hiroshi, Ito, Masamichi, Ohara, Maho, Kobayashi, Noriko, Fujii, Kentaro, Watanabe, Hideki, Satou, Susumu, Koda, Rintaro, Narui, Hironobu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6037682/
https://www.ncbi.nlm.nih.gov/pubmed/29985414
http://dx.doi.org/10.1038/s41598-018-28418-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6037682/
https://www.ncbi.nlm.nih.gov/pubmed/29985414
http://dx.doi.org/10.1038/s41598-018-28418-6

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