A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the stochastic oxygen vacancy generation/recombinat...

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Detalles Bibliográficos
Autores principales: Kao, Yun-Feng, Zhuang, Wei Cheng, Lin, Chrong-Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6047946/
https://www.ncbi.nlm.nih.gov/pubmed/30014229
http://dx.doi.org/10.1186/s11671-018-2619-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6047946/
https://www.ncbi.nlm.nih.gov/pubmed/30014229
http://dx.doi.org/10.1186/s11671-018-2619-x

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