Cargando…
A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the stochastic oxygen vacancy generation/recombinat...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6047946/ https://www.ncbi.nlm.nih.gov/pubmed/30014229 http://dx.doi.org/10.1186/s11671-018-2619-x |