Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decr...

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Detalles Bibliográficos
Autores principales: Skaja, Katharina, Andrä, Michael, Rana, Vikas, Waser, Rainer, Dittmann, Regina, Baeumer, Christoph
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6052165/
https://www.ncbi.nlm.nih.gov/pubmed/30022129
http://dx.doi.org/10.1038/s41598-018-28992-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6052165/
https://www.ncbi.nlm.nih.gov/pubmed/30022129
http://dx.doi.org/10.1038/s41598-018-28992-9

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