Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decr...

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Autores principales: Skaja, Katharina, Andrä, Michael, Rana, Vikas, Waser, Rainer, Dittmann, Regina, Baeumer, Christoph
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6052165/
https://www.ncbi.nlm.nih.gov/pubmed/30022129
http://dx.doi.org/10.1038/s41598-018-28992-9
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author Skaja, Katharina
Andrä, Michael
Rana, Vikas
Waser, Rainer
Dittmann, Regina
Baeumer, Christoph
author_facet Skaja, Katharina
Andrä, Michael
Rana, Vikas
Waser, Rainer
Dittmann, Regina
Baeumer, Christoph
author_sort Skaja, Katharina
collection PubMed
description In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window R(OFF)/R(ON) was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.
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spelling pubmed-60521652018-07-23 Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices Skaja, Katharina Andrä, Michael Rana, Vikas Waser, Rainer Dittmann, Regina Baeumer, Christoph Sci Rep Article In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window R(OFF)/R(ON) was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies. Nature Publishing Group UK 2018-07-18 /pmc/articles/PMC6052165/ /pubmed/30022129 http://dx.doi.org/10.1038/s41598-018-28992-9 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Skaja, Katharina
Andrä, Michael
Rana, Vikas
Waser, Rainer
Dittmann, Regina
Baeumer, Christoph
Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title_full Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title_fullStr Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title_full_unstemmed Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title_short Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
title_sort reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide reram devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6052165/
https://www.ncbi.nlm.nih.gov/pubmed/30022129
http://dx.doi.org/10.1038/s41598-018-28992-9
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