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Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decr...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6052165/ https://www.ncbi.nlm.nih.gov/pubmed/30022129 http://dx.doi.org/10.1038/s41598-018-28992-9 |