A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In(2)O(3) thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by...

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Detalles Bibliográficos
Autores principales: Kyndiah, Adrica, Ablat, Abduleziz, Guyot-Reeb, Seymour, Schultz, Thorsten, Zu, Fengshuo, Koch, Norbert, Amsalem, Patrick, Chiodini, Stefano, Yilmaz Alic, Tugbahan, Topal, Yasemin, Kus, Mahmut, Hirsch, Lionel, Fasquel, Sophie, Abbas, Mamatimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6053378/
https://www.ncbi.nlm.nih.gov/pubmed/30026501
http://dx.doi.org/10.1038/s41598-018-29220-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6053378/
https://www.ncbi.nlm.nih.gov/pubmed/30026501
http://dx.doi.org/10.1038/s41598-018-29220-0

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