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A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors
Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In(2)O(3) thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by...
Autores principales: | Kyndiah, Adrica, Ablat, Abduleziz, Guyot-Reeb, Seymour, Schultz, Thorsten, Zu, Fengshuo, Koch, Norbert, Amsalem, Patrick, Chiodini, Stefano, Yilmaz Alic, Tugbahan, Topal, Yasemin, Kus, Mahmut, Hirsch, Lionel, Fasquel, Sophie, Abbas, Mamatimin |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6053378/ https://www.ncbi.nlm.nih.gov/pubmed/30026501 http://dx.doi.org/10.1038/s41598-018-29220-0 |
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