Native point defects of semiconducting layered Bi(2)O(2)Se

Bi(2)O(2)Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS(2) and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and l...

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Detalles Bibliográficos
Autores principales: Li, Huanglong, Xu, Xintong, Zhang, Yi, Gillen, Roland, Shi, Luping, Robertson, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6053437/
https://www.ncbi.nlm.nih.gov/pubmed/30026542
http://dx.doi.org/10.1038/s41598-018-29385-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6053437/
https://www.ncbi.nlm.nih.gov/pubmed/30026542
http://dx.doi.org/10.1038/s41598-018-29385-8

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