Anomalous Hall effect derived from multiple Weyl nodes in high-mobility EuTiO(3) films

EuTiO(3), a magnetic semiconductor with a simple band structure, is one of the ideal systems to control the anomalous Hall effect (AHE) by tuning the Fermi level. The electrons in the conduction bands of La-doped EuTiO(3) are subject to the spin-orbit interaction and Zeeman field from the spontaneou...

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Detalles Bibliográficos
Autores principales: Takahashi, Kei S., Ishizuka, Hiroaki, Murata, Tomoki, Wang, Qing Y., Tokura, Yoshinori, Nagaosa, Naoto, Kawasaki, Masashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6054512/
https://www.ncbi.nlm.nih.gov/pubmed/30035219
http://dx.doi.org/10.1126/sciadv.aar7880

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6054512/
https://www.ncbi.nlm.nih.gov/pubmed/30035219
http://dx.doi.org/10.1126/sciadv.aar7880

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