Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO(2) RRAM devices

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufactur...

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Detalles Bibliográficos
Autores principales: Grossi, Alessandro, Perez, Eduardo, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Roelofs, Robin, Woodruff, Jacob, Raisanen, Petri, Li, Wei, Givens, Michael, Costina, Ioan, Schubert, Markus Andreas, Wenger, Christian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6057879/
https://www.ncbi.nlm.nih.gov/pubmed/30042433
http://dx.doi.org/10.1038/s41598-018-29548-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6057879/
https://www.ncbi.nlm.nih.gov/pubmed/30042433
http://dx.doi.org/10.1038/s41598-018-29548-7

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