Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature. Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy (MBE). All samples displayed a single electroluminescent spectral peak at...

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Detalles Bibliográficos
Autores principales: Growden, Tyler A, Zhang, Weidong, Brown, Elliott R, Storm, David F, Meyer, David J, Berger, Paul R
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6060061/
https://www.ncbi.nlm.nih.gov/pubmed/30839526
http://dx.doi.org/10.1038/lsa.2017.150

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6060061/
https://www.ncbi.nlm.nih.gov/pubmed/30839526
http://dx.doi.org/10.1038/lsa.2017.150

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