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Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature. Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy (MBE). All samples displayed a single electroluminescent spectral peak at...

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Detalles Bibliográficos
Autores principales:	Growden, Tyler A, Zhang, Weidong, Brown, Elliott R, Storm, David F, Meyer, David J, Berger, Paul R
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6060061/ https://www.ncbi.nlm.nih.gov/pubmed/30839526 http://dx.doi.org/10.1038/lsa.2017.150

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