Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd Multilayers

The perpendicular magnetic anisotropy (PMA) has been achieved in Ta/Pd/CoFeMnSi (CFMS)/MgO/Pd film, in which the Heusler compound CoFeMnSi is one of the most promising candidates for spin gapless semiconductor (SGS). The strong PMA, with the effective anisotropy constant K(eff) of 5.6 × 10(5) erg/cm...

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Detalles Bibliográficos
Autores principales: Zhang, Qing, Fu, Huarui, You, Caiyin, Ma, Li, Tian, Na
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6060204/
https://www.ncbi.nlm.nih.gov/pubmed/30047015
http://dx.doi.org/10.1186/s11671-018-2628-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6060204/
https://www.ncbi.nlm.nih.gov/pubmed/30047015
http://dx.doi.org/10.1186/s11671-018-2628-9

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