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Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
During the formation of Ge fin structures on a silicon-on-insulator (SOI) substrate, we found that the dry etching process must be carefully controlled. Otherwise, it may lead to Ge over-etching or the formation of an undesirable Ge fin profile. If the etching process is not well controlled, the top...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6068056/ https://www.ncbi.nlm.nih.gov/pubmed/30066213 http://dx.doi.org/10.1186/s11671-018-2631-1 |