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Experiments on MEMS Integration in 0.25 μm CMOS Process

In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts...

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Autores principales: Michalik, Piotr, Fernández, Daniel, Wietstruck, Matthias, Kaynak, Mehmet, Madrenas, Jordi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6069414/
https://www.ncbi.nlm.nih.gov/pubmed/29966375
http://dx.doi.org/10.3390/s18072111
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author Michalik, Piotr
Fernández, Daniel
Wietstruck, Matthias
Kaynak, Mehmet
Madrenas, Jordi
author_facet Michalik, Piotr
Fernández, Daniel
Wietstruck, Matthias
Kaynak, Mehmet
Madrenas, Jordi
author_sort Michalik, Piotr
collection PubMed
description In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 [Formula: see text] g and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.
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spelling pubmed-60694142018-08-07 Experiments on MEMS Integration in 0.25 μm CMOS Process Michalik, Piotr Fernández, Daniel Wietstruck, Matthias Kaynak, Mehmet Madrenas, Jordi Sensors (Basel) Article In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 [Formula: see text] g and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress. MDPI 2018-06-30 /pmc/articles/PMC6069414/ /pubmed/29966375 http://dx.doi.org/10.3390/s18072111 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Michalik, Piotr
Fernández, Daniel
Wietstruck, Matthias
Kaynak, Mehmet
Madrenas, Jordi
Experiments on MEMS Integration in 0.25 μm CMOS Process
title Experiments on MEMS Integration in 0.25 μm CMOS Process
title_full Experiments on MEMS Integration in 0.25 μm CMOS Process
title_fullStr Experiments on MEMS Integration in 0.25 μm CMOS Process
title_full_unstemmed Experiments on MEMS Integration in 0.25 μm CMOS Process
title_short Experiments on MEMS Integration in 0.25 μm CMOS Process
title_sort experiments on mems integration in 0.25 μm cmos process
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6069414/
https://www.ncbi.nlm.nih.gov/pubmed/29966375
http://dx.doi.org/10.3390/s18072111
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