Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and dope...

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Detalles Bibliográficos
Autores principales: Lloret, Fernando, Eon, David, Bustarret, Etienne, Fiori, Alexandre, Araujo, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070895/
https://www.ncbi.nlm.nih.gov/pubmed/29966282
http://dx.doi.org/10.3390/nano8070480

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070895/
https://www.ncbi.nlm.nih.gov/pubmed/29966282
http://dx.doi.org/10.3390/nano8070480

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