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Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and dope...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070895/ https://www.ncbi.nlm.nih.gov/pubmed/29966282 http://dx.doi.org/10.3390/nano8070480 |