Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxia...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Lee, Hyunkyu, Song, Keun Man, Kim, Jaekyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070998/
https://www.ncbi.nlm.nih.gov/pubmed/30021982
http://dx.doi.org/10.3390/nano8070543

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070998/
https://www.ncbi.nlm.nih.gov/pubmed/30021982
http://dx.doi.org/10.3390/nano8070543

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