Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from...

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Detalles Bibliográficos
Autores principales: Zhou, Quanbin, Wang, Hong, Xu, Mingsheng, Zhang, Xi-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6071233/
https://www.ncbi.nlm.nih.gov/pubmed/29987245
http://dx.doi.org/10.3390/nano8070512

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6071233/
https://www.ncbi.nlm.nih.gov/pubmed/29987245
http://dx.doi.org/10.3390/nano8070512

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