High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of...

Descripción completa

Detalles Bibliográficos
Autores principales: Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Khlobystov, Andrei N., Eaves, Laurence, Foxon, C. Thomas, Beton, Peter H., Novikov, Sergei V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6073546/
https://www.ncbi.nlm.nih.gov/pubmed/29966333
http://dx.doi.org/10.3390/ma11071119

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6073546/
https://www.ncbi.nlm.nih.gov/pubmed/29966333
http://dx.doi.org/10.3390/ma11071119

Ejemplares similares