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Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spi...

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Detalles Bibliográficos
Autores principales: Wolfowicz, G., Whiteley, S. J., Awschalom, D. D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6077694/
https://www.ncbi.nlm.nih.gov/pubmed/30012622
http://dx.doi.org/10.1073/pnas.1806998115