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Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spi...

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Autores principales: Wolfowicz, G., Whiteley, S. J., Awschalom, D. D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6077694/
https://www.ncbi.nlm.nih.gov/pubmed/30012622
http://dx.doi.org/10.1073/pnas.1806998115
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author Wolfowicz, G.
Whiteley, S. J.
Awschalom, D. D.
author_facet Wolfowicz, G.
Whiteley, S. J.
Awschalom, D. D.
author_sort Wolfowicz, G.
collection PubMed
description Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of [Formula: see text]. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.
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spelling pubmed-60776942018-08-07 Electrometry by optical charge conversion of deep defects in 4H-SiC Wolfowicz, G. Whiteley, S. J. Awschalom, D. D. Proc Natl Acad Sci U S A Physical Sciences Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of [Formula: see text]. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator. National Academy of Sciences 2018-07-31 2018-07-16 /pmc/articles/PMC6077694/ /pubmed/30012622 http://dx.doi.org/10.1073/pnas.1806998115 Text en Copyright © 2018 the Author(s). Published by PNAS. https://creativecommons.org/licenses/by-nc-nd/4.0/ This open access article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND) (https://creativecommons.org/licenses/by-nc-nd/4.0/) .
spellingShingle Physical Sciences
Wolfowicz, G.
Whiteley, S. J.
Awschalom, D. D.
Electrometry by optical charge conversion of deep defects in 4H-SiC
title Electrometry by optical charge conversion of deep defects in 4H-SiC
title_full Electrometry by optical charge conversion of deep defects in 4H-SiC
title_fullStr Electrometry by optical charge conversion of deep defects in 4H-SiC
title_full_unstemmed Electrometry by optical charge conversion of deep defects in 4H-SiC
title_short Electrometry by optical charge conversion of deep defects in 4H-SiC
title_sort electrometry by optical charge conversion of deep defects in 4h-sic
topic Physical Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6077694/
https://www.ncbi.nlm.nih.gov/pubmed/30012622
http://dx.doi.org/10.1073/pnas.1806998115
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