A gate-free monolayer WSe(2) pn diode

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertic...

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Detalles Bibliográficos
Autores principales: Chen, Jhih-Wei, Lo, Shun-Tsung, Ho, Sheng-Chin, Wong, Sheng-Shong, Vu, Thi-Hai-Yen, Zhang, Xin-Quan, Liu, Yi-De, Chiou, Yu-You, Chen, Yu-Xun, Yang, Jan-Chi, Chen, Yi-Chun, Chu, Ying-Hao, Lee, Yi-Hsien, Chung, Chung-Jen, Chen, Tse-Ming, Chen, Chia-Hao, Wu, Chung-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6081376/
https://www.ncbi.nlm.nih.gov/pubmed/30087328
http://dx.doi.org/10.1038/s41467-018-05326-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6081376/
https://www.ncbi.nlm.nih.gov/pubmed/30087328
http://dx.doi.org/10.1038/s41467-018-05326-x

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